DMG2302UK-7, MOSFET N-CH 20V 2.8A SOT23
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см. техническую документацию
см. техническую документацию
53 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
44 ֏
от 500 шт. —
37 ֏
от 3000 шт. —
32 ֏
20 шт.
на сумму 1 060 ֏
Описание
Описание Транзистор: N-MOSFET; полевой
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 2.8 |
| Maximum Drain Source Resistance (mOhm) | 90 4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Voltage (V) | ±12 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1100 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT-23 |
| Supplier Package | SOT-23 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 1.7 |
| Typical Gate Charge @ 10V (nC) | 2.8 |
| Typical Gate Charge @ Vgs (nC) | 1.4 4.5V|2.8 10V |
| Typical Input Capacitance @ Vds (pF) | 130 10V |
| Typical Rise Time (ns) | 2.7 |
| Typical Turn-Off Delay Time (ns) | 4.2 |
| Typical Turn-On Delay Time (ns) | 0.6 |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 2.8 A |
| Maximum Drain Source Resistance | 120 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.1 W |
| Minimum Gate Threshold Voltage | 0.3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Series | DMG2302UK |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 2.8 nC @ 10 V |
| Width | 1.4mm |
| Вес, г | 0.01 |