DMG3418L-7, MOSFET N-CH 30V 4A SOT23
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см. техническую документацию
см. техническую документацию
71 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
58 ֏
от 500 шт. —
43 ֏
от 3000 шт. —
39 ֏
20 шт.
на сумму 1 420 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-канал 30V 4A (Ta) 1,4W (Ta) поверхностный монтаж SOT-23
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 2 ns |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number Of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Cut Tape or Reel |
| Pd - Power Dissipation | 1.4 W |
| Product Category | MOSFET |
| Product Type | MOSFET |
| Qg - Gate Charge | 5.5 nC |
| Rds On - Drain-Source Resistance | 60 mOhms |
| Rise Time | 1.6 ns |
| Series | DMG3418 |
| Subcategory | MOSFETs |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 10.3 ns |
| Typical Turn-On Delay Time | 1.9 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs Th - Gate-Source Threshold Voltage | 1.5 V |
| Base Product Number | DMG3418 -> |
| Current - Continuous Drain (Id) @ 25В°C | 4A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 464.3pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Power Dissipation (Max) | 1.4W (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | SOT-23 |
| Vgs (Max) | В±12V |
| Vgs(th) (Max) @ Id | 1.5V @ 250ВµA |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 150 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Power Dissipation | 1.4 W |
| Minimum Gate Threshold Voltage | 0.5V |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 5.5 nC @ 4.5 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.5 nC |
| Rds On - Drain-Source Resistance: | 60 mOhms |
| Rise Time: | 1.6 ns |
| Series: | DMG3418 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 10.3 ns |
| Typical Turn-On Delay Time: | 1.9 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet DMG3418L-7
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Datasheet DMG3418L-7
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Datasheet DMG3418L-7
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