DMG4800LSD-13, MOSFET 2N-CH 30V 7.5A 8SO
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см. техническую документацию
см. техническую документацию
150 ֏
Мин. кол-во для заказа 6 шт.
6 шт.
на сумму 900 ֏
Описание
Описание Транзистор N-MOSFET x2, полевой, 30В, 6А, 1,5Вт, SO8 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 7.5 A |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 1.6V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.5 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8.56 nC @ 5 V |
| Width | 3.95mm |
| Automotive | No |
| Configuration | Dual Dual Drain |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 7.5 |
| Maximum Drain Source Resistance (mOhm) | 16@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SO |
| Supplier Package | SO |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 8.55 |
| Typical Gate Charge @ Vgs (nC) | 8.56@5V |
| Typical Input Capacitance @ Vds (pF) | 798@10V |
| Typical Rise Time (ns) | 4.5 |
| Typical Turn-Off Delay Time (ns) | 26.33 |
| Typical Turn-On Delay Time (ns) | 5.03 |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 8.55 ns |
| Id - Continuous Drain Current: | 7.5 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 1.17 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 8.56 nC |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Rise Time: | 4.5 ns |
| Series: | DMG4800 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 26.33 ns |
| Typical Turn-On Delay Time: | 5.03 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Вес, г | 0.07 |