DMN2004K-7, MOSFET N-CH 20V 630MA SOT23-3
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см. техническую документацию
см. техническую документацию
58 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
49 ֏
от 500 шт. —
41 ֏
от 3000 шт. —
34 ֏
20 шт.
на сумму 1 160 ֏
Описание
Описание Транзистор N-MOSFET, полевой, 20В, 0,45А, 350мВт, SOT23 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 630 mA |
| Maximum Drain Source Resistance | 900 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 350 mW |
| Minimum Operating Temperature | -65 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 0.9 nC @ 4.5 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 37.6 ns |
| Id - Continuous Drain Current: | 630 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 900 pC |
| Rds On - Drain-Source Resistance: | 550 mOhms |
| Rise Time: | 8.4 ns |
| Series: | DMN2004 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 59.4 ns |
| Typical Turn-On Delay Time: | 5.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |