DMN3032LE-13, MOSFET N-CH 30V 5.6A SOT223

Фото 1/2 DMN3032LE-13, MOSFET N-CH 30V 5.6A SOT223
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154 ֏
Кратность заказа 10 шт.
от 100 шт.124 ֏
от 500 шт.97 ֏
от 2500 шт.81 ֏
10 шт. на сумму 1 540 ֏
Номенклатурный номер: 8003512196
Бренд: DIODES INC.

Описание

Trans MOSFET N-CH 30V 5.6A 4-Pin (3 Tab) SOT-223 T/R

Технические параметры

Automotive No
Channel Mode Enhancement
Channel Type N
Configuration Single Dual Drain
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape Gull-wing
Maximum Continuous Drain Current (A) 5.6
Maximum Drain Source Resistance (mOhm) 29 10V
Maximum Drain Source Voltage (V) 30
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 2
Maximum IDSS (uA) 1
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 14000
Minimum Operating Temperature (°C) -55
Mounting Surface Mount
Number of Elements per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 3
Pin Count 4
PPAP No
Product Category Power MOSFET
Standard Package Name SOT
Supplier Package SOT-223
Tab Tab
Typical Fall Time (ns) 1.9
Typical Gate Charge @ 10V (nC) 11.3
Typical Gate Charge @ Vgs (nC) 11.3 10V
Typical Input Capacitance @ Vds (pF) 498 15V
Typical Rise Time (ns) 3.9
Typical Turn-Off Delay Time (ns) 10
Typical Turn-On Delay Time (ns) 2.3
Maximum Continuous Drain Current 15.4 A
Maximum Drain Source Resistance 35 mΩ
Maximum Drain Source Voltage 30 V
Maximum Gate Source Voltage -20 V, +20 V
Maximum Gate Threshold Voltage 2V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 1.8 W
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Package Type SOT-223
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 11.3 nC @ 10 V
Width 3.55mm
Вес, г 0.26

Техническая документация

Datasheet
pdf, 1680 КБ
Datasheet
pdf, 321 КБ
Datasheet DMN3032LE-13
pdf, 315 КБ