DMN3032LE-13, MOSFET N-CH 30V 5.6A SOT223
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Описание
Trans MOSFET N-CH 30V 5.6A 4-Pin (3 Tab) SOT-223 T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Dual Drain |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 5.6 |
Maximum Drain Source Resistance (mOhm) | 29 10V |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 2 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 14000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 4 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
Tab | Tab |
Typical Fall Time (ns) | 1.9 |
Typical Gate Charge @ 10V (nC) | 11.3 |
Typical Gate Charge @ Vgs (nC) | 11.3 10V |
Typical Input Capacitance @ Vds (pF) | 498 15V |
Typical Rise Time (ns) | 3.9 |
Typical Turn-Off Delay Time (ns) | 10 |
Typical Turn-On Delay Time (ns) | 2.3 |
Maximum Continuous Drain Current | 15.4 A |
Maximum Drain Source Resistance | 35 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 1.8 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-223 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 11.3 nC @ 10 V |
Width | 3.55mm |
Вес, г | 0.26 |