FCD5N60TM, N 600 V 4.6ATc 54WTc TO-252AA
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Описание
Cloud Power Management Solutions
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
onsemi Cloud Power Management Solutions drive efficiency while simplifying system design, reducing board space, improving reliability and accelerating time to market. As the world demand for energy increases by 35 to 40% by 2030, onsemi powers major industrial products with cool efficiency to conserve the energy we use every day.
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 4.6(A) |
| Drain-Source On-Volt | 600(V) |
| Gate-Source Voltage (Max) | ±30(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Polarity | N |
| Power Dissipation | 54(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 22 ns |
| Forward Transconductance - Min: | 3.8 S |
| Id - Continuous Drain Current: | 4.6 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 54 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Rds On - Drain-Source Resistance: | 810 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 40 ns |
| Series: | FCD5N60 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 47 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
Техническая документация
Datasheet
pdf, 429 КБ
Документация
pdf, 432 КБ