DMN6068SE-13, MOSFET N-CH 60V 4.1A SOT223
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от 100 шт. —
128 ֏
от 500 шт. —
97 ֏
от 4000 шт. —
82 ֏
10 шт.
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Описание
Описание Транзистор N-MOSFET, полевой, 60В, 4,5А, 2Вт, SOT223 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 8.7 ns |
| Forward Transconductance - Min: | 19.7 S |
| Id - Continuous Drain Current: | 5.6 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | SOT-223-3 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10.3 nC |
| Rds On - Drain-Source Resistance: | 68 mOhms |
| Rise Time: | 10.8 ns |
| Series: | DMN6068 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 11.9 ns |
| Typical Turn-On Delay Time: | 3.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 5.6 A |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.7 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 10.3 nC @ 10 V |
| Width | 3.7mm |