DMP3056LSD-13, MOSFET 2P-CH 30V 6.9A 8-SOIC
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181 ֏
Кратность заказа 10 шт.
от 100 шт. —
150 ֏
от 500 шт. —
132 ֏
от 1000 шт. —
121 ֏
10 шт.
на сумму 1 810 ֏
Альтернативные предложения1
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 14.7 ns |
| Forward Transconductance - Min: | 8 S |
| Id - Continuous Drain Current: | 6.9 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 6.8 nC |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Rise Time: | 5.3 ns |
| Series: | DMP3056 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 26.5 ns |
| Typical Turn-On Delay Time: | 6.4 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Case | SO8 |
| Drain current | -5.1A |
| Drain-source voltage | -30V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | DIODES INCORPORATED |
| Mounting | SMD |
| On-state resistance | 65mΩ |
| Polarisation | unipolar |
| Power dissipation | 2.5W |
| Type of transistor | P-MOSFET x2 |