DMN6040SK3-13, MOSFET N CH 60V 20A TO252
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см. техническую документацию
см. техническую документацию
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от 10 шт. —
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3 шт.
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Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 42 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 22.4 nC @ 10 V |
| Width | 6.2mm |
| Continuous Drain Current (Id) | 20A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 40mΩ@10V, 20A |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 1.287nF@25V |
| Power Dissipation (Pd) | 42W |
| Total Gate Charge (Qg@Vgs) | 22.4nC@10V |
| Type | 1PCSNChannel |