DMP2035U-7, MOSFET P-CH 20V 3.6A SOT23-3
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см. техническую документацию
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58 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 100 шт. —
49 ֏
от 500 шт. —
42 ֏
от 3000 шт. —
33 ֏
20 шт.
на сумму 1 160 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 4.9 |
| Maximum Drain Source Resistance (mOhm) | 35 4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1200 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 42.4 |
| Typical Gate Charge @ Vgs (nC) | 15.4 4.5V |
| Typical Input Capacitance @ Vds (pF) | 1610 10V |
| Typical Rise Time (ns) | 12.4 |
| Typical Turn-Off Delay Time (ns) | 94.1 |
| Typical Turn-On Delay Time (ns) | 16.8 |
| Drain Source On State Resistance | 0.023Ом |
| Power Dissipation | 810мВт |
| Квалификация | - |
| Количество Выводов | 3вывод(-ов) |
| Линейка Продукции | - |
| Максимальная Рабочая Температура | 150°C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 20В |
| Непрерывный Ток Стока | 3.6А |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 700мВ |
| Рассеиваемая Мощность | 810мВт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.023Ом |
| Стандарты Автомобильной Промышленности | - |
| Стиль Корпуса Транзистора | SOT-23 |
| Уровень Чувствительности к Влажности (MSL) | - |
| Maximum Continuous Drain Current | 3.6 A |
| Maximum Drain Source Resistance | 62 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 810 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | SOT-23 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 15.4 nC @ 4.5 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 42.4 ns |
| Forward Transconductance - Min: | 14 S |
| Id - Continuous Drain Current: | 4.9 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 15.4 nC |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Rise Time: | 12.4 ns |
| Series: | DMP2035 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 94.1 ns |
| Typical Turn-On Delay Time: | 16.8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 481 КБ