DMG3414U-7, MOSFET N-CH 20V 4.2A SOT23-3
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88 ֏
Кратность заказа 10 шт.
от 100 шт. —
71 ֏
от 500 шт. —
58 ֏
от 3000 шт. —
49 ֏
10 шт.
на сумму 880 ֏
Описание
Trans MOSFET N-CH 20V 4.2A 3-Pin SOT-23 T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 4.2 |
Maximum Drain Source Resistance (mOhm) | 25 4.5V |
Maximum Drain Source Voltage (V) | 20 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±8 |
Maximum Gate Threshold Voltage (V) | 0.9 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 780 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | SOT-23 |
Supplier Package | SOT-23 |
Typical Fall Time (ns) | 9.6 |
Typical Gate Charge @ Vgs (nC) | 9.6 4.5V |
Typical Input Capacitance @ Vds (pF) | 829.9 10V |
Typical Rise Time (ns) | 8.3 |
Typical Turn-Off Delay Time (ns) | 40.1 |
Typical Turn-On Delay Time (ns) | 8.1 |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 9.6 ns |
Id - Continuous Drain Current: | 4.2 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 780 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Qg - Gate Charge: | 9.6 nC |
Rds On - Drain-Source Resistance: | 25 mOhms |
Rise Time: | 8.3 ns |
Series: | DMG3414 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 40.1 ns |
Typical Turn-On Delay Time: | 8.1 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -8 V, +8 V |
Vgs th - Gate-Source Threshold Voltage: | 500 mV |
Maximum Continuous Drain Current | 4.2 A |
Maximum Drain Source Resistance | 37 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -8 V, +8 V |
Maximum Gate Threshold Voltage | 0.9V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 780 mW |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 9.6 nC @ 4.5 V |
Width | 1.4mm |
Техническая документация
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