DMN601WK-7, MOSFET N-CH 60V 300MA SOT323
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36 ֏
Кратность заказа 100 шт.
от 500 шт. —
27 ֏
от 1000 шт. —
22 ֏
от 3000 шт. —
19 ֏
100 шт.
на сумму 3 600 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-канальный полевой МОП-транзистор, от 40 до 90 В, Diodes Inc.
Технические параметры
Brand | Diodes Incorporated |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Id - Continuous Drain Current | 300 mA |
Manufacturer | Diodes Incorporated |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -65 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SOT-323-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 200 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Product Type | MOSFET |
Rds On - Drain-Source Resistance | 2 Ohms |
Series | DMN60 |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 10 V |
Vgs Th - Gate-Source Threshold Voltage | 1 V |
Base Product Number | DMN601 -> |
Current - Continuous Drain (Id) @ 25В°C | 300mA (Ta) |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
ECCN | EAR99 |
FET Type | N-Channel |
HTSUS | 8541.21.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Surface Mount |
Operating Temperature | -65В°C ~ 150В°C (TJ) |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
Power Dissipation (Max) | 200mW (Ta) |
Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Supplier Device Package | SOT-323 |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Channel Type | N |
Maximum Continuous Drain Current | 300 mA |
Maximum Drain Source Resistance | 3 Ω |
Maximum Drain Source Voltage | 60 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 200 mW |
Number of Elements per Chip | 1 |
Package Type | SOT-323 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Width | 1.35mm |
Вес, г | 5 |