NSS40300MZ4G
750 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
484 ֏
от 10 шт. —
454 ֏
от 94 шт. —
363 ֏
2 шт.
на сумму 1 500 ֏
Описание
Электроэлемент
TRANSISTOR, PNP, -40V, -3A, SOT-223; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Transition Frequency ft:160MHz; Power Dissipation Pd:2W; DC Collector Current:-3A; DC Current Gain hFE:100hFE; Transi
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 40 V |
| Collector- Emitter Voltage VCEO Max | 40 V |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 200 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 160 MHz |
| Height | 1.57 mm |
| Length | 6.5 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Pd - Power Dissipation | 2000 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | NSS40300 |
| Transistor Polarity | PNP |
| Unit Weight | 0.006632 oz |
| Width | 3.5 mm |
| Вес, г | 0.17 |
Техническая документация
Документация
pdf, 208 КБ