2N7002WG
427 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
190 ֏
от 10 шт. —
115 ֏
от 100 шт. —
47 ֏
2 шт.
на сумму 854 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 0.34A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:340mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Po
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns |
| Height | 0.85 mm |
| Id - Continuous Drain Current | 310 mA |
| Length | 2.1 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SC-70-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 280 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | 2N7002W |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 55.8 ns |
| Typical Turn-On Delay Time | 12.2 ns |
| Unit Weight | 0.000219 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.24 mm |
| Вес, г | 0.0307 |
Техническая документация
Datasheet 2V7002WT1G
pdf, 65 КБ