BCP56G
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530 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
264 ֏
от 10 шт. —
185 ֏
от 100 шт. —
109 ֏
2 шт.
на сумму 1 060 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:1W; DC Collector Current:1.2A; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Application Code:GP; Av Current Ic:1A; Collector Emitter Saturation Voltage Vce(on):500mV; Continuous Collector Current Ic Max:1.2A; Current Ic Continuous a Max:1.2A; Current Ic hFE:150mA; Hfe Min:40; No. of Transistors:1; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Power Dissipation Ptot Max:1W; SMD Marking:BCP56; Voltage Vcbo:100V
Технические параметры
Category | Bipolar Power |
Collector Current (DC) | 1(A) |
Collector-Base Voltage | 100(V) |
Collector-Emitter Voltage | 80(V) |
DC Current Gain | 25 |
Emitter-Base Voltage | 5(V) |
Frequency | 130(MHz) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -65C to 150C |
Operating Temperature Classification | Military |
Output Power | Not Required(W) |
Package Type | SOT-223 |
Packaging | Tape and Reel |
Pin Count | 3+Tab |
Power Dissipation | 1.5(W) |
Rad Hardened | No |
Transistor Polarity | NPN |
Вес, г | 0.0725 |
Техническая документация
Datasheet SBCP56-10T1G
pdf, 69 КБ