BSV52LG
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
220 ֏
от 10 шт. —
141 ֏
от 100 шт. —
72 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, 12V, 100MA, SOT-23-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:400MHz; Power Dissipation Pd:225mW; DC Collector Current:100mA; DC Current Gain hFE:25hFE; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Collector- Base Voltage VCBO | 20 V |
| Collector- Emitter Voltage VCEO Max | 12 V |
| Collector-Emitter Saturation Voltage | 0.4 V |
| Configuration | Single |
| Continuous Collector Current | 0.2 A |
| DC Collector/Base Gain hfe Min | 40 |
| DC Current Gain hFE Max | 120 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 400 MHz |
| Height | 0.93 mm |
| Length | 2.92 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 0.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 225 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BSV52 |
| Transistor Polarity | NPN |
| Width | 1.3 mm |
| Вес, г | 0.06 |
Техническая документация
Datasheet BSV52LT1G
pdf, 70 КБ