DMHC3025LSD
Описание
Электроэлемент
MOSFET, AEC-Q101, DUAL N-CH & P-CH, 30V, Transistor Polarity:Dual N and P Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.019ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:2V, , RoHS Compliant: Yes
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | NIP |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 6@N ChannelI4.2@P Channel A |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 25@10V@N ChannelI50@10V@P Channel mOhm |
| Typical Fall Time | 8.7@N ChannelI13.5@P Channel ns |
| Typical Rise Time | 15@N ChannelI4.9@P Channel ns |
| Typical Turn-Off Delay Time | 17.5@N ChannelI28.2@P Channel ns |
| Typical Turn-On Delay Time | 11.2@N ChannelI7.5@P Channel ns |
| Вес, г | 0.12 |
Техническая документация
Datasheet
pdf, 524 КБ