NTA4151PG
423 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
185 ֏
от 10 шт. —
128 ֏
от 100 шт. —
85 ֏
2 шт.
на сумму 846 ֏
Описание
Электроэлемент
MOSFET, P CH, -20V, 760MA, SC-75-3; Transistor Polarity:P Channel; Continuous Drain Current Id:760mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.26ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-450mV; Power Dissipation Pd:301mW; Transistor Case Style:SC-75; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Operating Temperature Min:-55°C
Технические параметры
Brand | ON Semiconductor |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 8.2 ns |
Forward Transconductance - Min | 0.4 S |
Height | 0.75 mm |
Id - Continuous Drain Current | -760 mA |
Length | 1.6 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SC-75-3 |
Packaging | Reel |
Pd - Power Dissipation | 301 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 490 mOhms |
Rise Time | 8.2 ns |
RoHS | Details |
Series | NTA4151P |
Technology | Si |
Transistor Polarity | P-Channel |
Transistor Type | 1 P-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 29 ns |
Typical Turn-On Delay Time | 8 ns |
Vds - Drain-Source Breakdown Voltage | -20 V |
Vgs - Gate-Source Voltage | 6 V |
Width | 0.8 mm |
Вес, г | 0.03 |
Техническая документация
Документация
pdf, 229 КБ