DMN65D8L
414 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
102 ֏
от 100 шт. —
34 ֏
2 шт.
на сумму 828 ֏
Описание
Электроэлемент
MOSFET, N-CH, 20V, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissi
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 7.3 n |
| Forward Transconductance - Min | 80 ms |
| Id - Continuous Drain Current | 310 mA |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 370 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 870 pC |
| Rds On - Drain-Source Resistance | 2 Ohms |
| Rise Time | 2.8 ns |
| RoHS | Details |
| Series | DMN63 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12.6 ns |
| Typical Turn-On Delay Time | 2.7 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Вес, г | 0.04 |
Техническая документация
Datasheet DMN65D8L-7
pdf, 373 КБ