MJE5851G
5 100 ֏
от 2 шт. —
4 450 ֏
от 5 шт. —
4 020 ֏
от 10 шт. —
3 820 ֏
1 шт.
на сумму 5 100 ֏
Описание
Электроэлемент
MJE Series 350 V 8 A SWITCHMODE™ Series PNP Silicon Power Transistor - TO-220AB
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 400 V |
| Collector- Emitter Voltage VCEO Max | 350 V |
| Collector-Emitter Saturation Voltage | 2 V |
| Configuration | Single |
| Continuous Collector Current | 8 A |
| DC Collector/Base Gain hfe Min | 15 |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 50 |
| Height | 15.75 mm |
| Length | 10.53 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 8 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 80 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJE5851 |
| Transistor Polarity | PNP |
| Unit Weight | 0.211644 oz |
| Width | 4.83 mm |
| Вес, г | 3.3 |
Техническая документация
Datasheet MJE5850G
pdf, 98 КБ