NTD2955G
1 060 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
880 ֏
от 10 шт. —
770 ֏
от 100 шт. —
680 ֏
2 шт.
на сумму 2 120 ֏
Описание
Электроэлемент
MOSFET, P CH, -60V, 12A, TO-252-4; Transistor Polarity:P Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.155ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 48 ns |
| Forward Transconductance - Min | 8 S |
| Height | 2.38 mm |
| Id - Continuous Drain Current | -12 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 55 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 155 mOhms |
| Rise Time | 45 ns |
| RoHS | Details |
| Series | NTD2955 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 26 ns |
| Typical Turn-On Delay Time | 10 ns |
| Unit Weight | 0.139332 oz |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 6.22 mm |
| Вес, г | 0.39 |
Техническая документация
Документация
pdf, 224 КБ