MJD6039G
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
1 720 ֏
от 2 шт. —
1 320 ֏
от 5 шт. —
1 020 ֏
от 10 шт. —
910 ֏
1 шт.
на сумму 1 720 ֏
Описание
Электроэлемент
DARLINGTON TRANSISTOR, NPN, 80V, TO-252; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:4A; DC Current Gain hFE:1000hFE; Transis
Технические параметры
Collector Current (DC) | 4(A) |
Collector Current (DC) (Max) | 4 A |
Collector-Base Voltage | 80(V) |
Collector-Emitter Saturation Voltage | 2.5(V) |
Collector-Emitter Voltage | 80(V) |
Configuration | Single |
DC Current Gain | 1000 |
Emitter-Base Voltage | 5(V) |
Mounting | Surface Mount |
Number of Elements | 1 |
Operating Temp Range | -65C to 150C |
Operating Temperature Classification | Military |
Package Type | DPAK |
Packaging | Tape and Reel |
Pin Count | 2+Tab |
Polarity | NPN |
Power Dissipation | 1.75(W) |
Rad Hardened | No |
Вес, г | 0.42 |
Техническая документация
Datasheet MJD6039T4G
pdf, 182 КБ