DMG1012TQ-7, MOSFET N-CH 20V 630MA SOT523

Фото 1/2 DMG1012TQ-7, MOSFET N-CH 20V 630MA SOT523
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62 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
20 шт. на сумму 1 240 ֏
Номенклатурный номер: 8003892642
Бренд: DIODES INC.

Описание

Automotive MOSFETs
Diodes Incorporated Automotive MOSFETs meet the stringent requirements of the AEC-Q101 reliability standard of the Automotive Electronics Council. Products with a 'Q' suffix indicate that the product is Automotive grade. This means the device has passed the rigorous AEC-Q101 standard and is fully supported for Automotive applications. The MOSFETs support customers with the PPAP (Production Part Approval Process), and TS16949 approved manufacturing sites.

Технические параметры

Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 12.3 ns
Id - Continuous Drain Current: 630 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: SOT-523-3
Pd - Power Dissipation: 280 mW
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 736.6 pC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 400 mOhms
Rise Time: 7.4 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 26.7 ns
Typical Turn-On Delay Time: 5.1 ns
Vds - Drain-Source Breakdown Voltage: 20 V
Vgs - Gate-Source Voltage: -6 V, +6 V
Vgs th - Gate-Source Threshold Voltage: 500 mV
Вес, г 50

Техническая документация

Datasheet
pdf, 429 КБ