DMP3098LSD-13, MOSFET 2P-CH 30V 4.4A 8-SOIC
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см. техническую документацию
см. техническую документацию
256 ֏
Кратность заказа 10 шт.
от 100 шт. —
212 ֏
от 500 шт. —
163 ֏
от 2500 шт. —
145 ֏
10 шт.
на сумму 2 560 ֏
Описание
30V 4.4A 65mΩ@5A,10V 1.8W 2.1V@250uA 2 P-Channel SO-8 MOSFETs ROHS
Технические параметры
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 35mΩ@10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.5V |
| Type | 2 P-Channel |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: | 2500 |
| Fall Time: | 5 ns |
| Id - Continuous Drain Current: | 4.4 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 1.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Qg - Gate Charge: | 4 nC |
| Rds On - Drain-Source Resistance: | 115 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 17.6 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
Техническая документация
Datasheet
pdf, 214 КБ