DMN6140L
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
256 ֏
от 10 шт. —
181 ֏
от 100 шт. —
116 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 1.6A, SOT23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.092ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power
Технические параметры
Brand | Diodes Incorporated |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 10000 |
Fall Time | 2.7 ns |
Forward Transconductance - Min | 2.2 S |
Id - Continuous Drain Current | 2.3 A |
Manufacturer | Diodes Incorporated |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Pd - Power Dissipation | 1.3 W |
Product Category | MOSFET |
Qg - Gate Charge | 8.6 nC |
Rds On - Drain-Source Resistance | 140 mOhms |
Rise Time | 3.6 ns |
RoHS | Details |
Series | DMN614 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 16.3 ns |
Typical Turn-On Delay Time | 2.6 ns |
Vds - Drain-Source Breakdown Voltage | 60 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Вес, г | 0.0691 |
Техническая документация
Datasheet
pdf, 582 КБ