BC847BW
410 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
97 ֏
от 100 шт. —
29 ֏
2 шт.
на сумму 820 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, 45V, 100mA, 200mW, SOT-323, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:45V, Transition Frequency ft:300MHz, Power Dissipation Pd:200mW, DC Collector Current:100mA, DC Current Gain hFE:290hFE , RoHS Compliant: Yes
Технические параметры
| Transistor Polarity | NPN; Collector Emitter Voltage V(br)ceo |
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 50 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 600 mV |
| Configuration | Single |
| DC Collector/Base Gain hfe Min | 200 at 2 mA, 5 V |
| Emitter- Base Voltage VEBO | 6 V |
| Factory Pack Quantity | 3000 |
| Gain Bandwidth Product fT | 300 MHz |
| Height | 1 mm |
| Length | 2.2 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 200 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 200 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | BC847B |
| Width | 1.35 mm |
| Вес, г | 0.0333 |
Техническая документация
Datasheet
pdf, 369 КБ