MJD41CG
Описание
Электроэлемент
TRANSISTOR, BIPOL, NPN, 100V, TO-252-4; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:3MHz; Power Dissipation Pd:1.75W; DC Collector Current:6A; DC Current Gain hFE:15hFE; Transistor Case Style:TO-252; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Configuration | Single |
| Continuous Collector Current | 6 A |
| DC Collector/Base Gain hfe Min | 30 |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 2.38 mm |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum DC Collector Current | 6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 20 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJD41C |
| Transistor Polarity | NPN |
| Unit Weight | 0.009185 oz |
| Width | 6.22 mm |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 84 КБ