NVMFS6H824NG
2 340 ֏
от 2 шт. —
1 900 ֏
от 5 шт. —
1 590 ֏
от 10 шт. —
1 500 ֏
1 шт.
на сумму 2 340 ֏
Описание
Электроэлемент
MOSFET, N-CH, 80V, 103A, 175DEG C, 115W; Transistor Polarity:N Channel; Continuous Drain Current Id:103A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0037ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:115W; Transistor Case Style:DFN; No. of Pins:5Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:AEC-Q101; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 19A(Ta), 103A(Tc) |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470pF @ 40V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 3.8W(Ta), 115W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V |
| Series | Automotive, AEC-Q101 |
| Supplier Device Package | 5-DFN(5x6)(8-SOFL) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 140ВµA |
| Вес, г | 0.162 |