MMUN2212LG
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
225 ֏
от 9 шт. —
154 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
MMUN2212LT1G NPN Digi Transistor, 100mA 50 V 22 kOhm, Ratio Of 1, 3-Pin SOT-23 | ON Semiconductor MMUN2212LT1G
Технические параметры
| Brand | ON Semiconductor |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Continuous Collector Current | 0.1 A |
| DC Collector/Base Gain hfe Min | 60 |
| DC Current Gain hFE Max | 60 |
| Factory Pack Quantity | 3000 |
| Height | 0.94 mm |
| Length | 2.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 246 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| RoHS | Details |
| Series | MMUN2212L |
| Transistor Polarity | NPN |
| Typical Input Resistor | 22 kOhms |
| Typical Resistor Ratio | 1 |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Вес, г | 0.0349 |
Техническая документация
Документация
pdf, 389 КБ