DMC3016LSD-13, MOSFET N/P-CH 30V 8.2A/6.2A 8SO
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242 ֏
Мин. кол-во для заказа 4 шт.
от 10 шт. —
225 ֏
от 100 шт. —
207 ֏
4 шт.
на сумму 968 ֏
Описание
Power MOSFETs
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Forward Diode Voltage | 1V |
| Maximum Continuous Drain Current | 10.5 A |
| Maximum Drain Source Resistance | 20 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Isolated |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 25.1 nC @ 10 V |
| Width | 3.95mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 5.6 ns, 40.4 ns |
| Id - Continuous Drain Current: | 8.2 A, 6.2 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 1.2 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 11.3 nC, 10.9 nC |
| Rds On - Drain-Source Resistance: | 15 mOhms, 30 mOhms |
| Rise Time: | 16.5 ns, 17.1 ns |
| Series: | DMC3016 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 26.1 ns, 60.5 ns |
| Typical Turn-On Delay Time: | 4.8 ns, 9.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |