FDG316P
840 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
580 ֏
от 10 шт. —
476 ֏
от 100 шт. —
393 ֏
2 шт.
на сумму 1 680 ֏
Описание
Электроэлемент
MOSFET,P-CH,30V,1.6A,SC70-6; Transistor Polarity:P Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.6V; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018); Current Id Max:1.6A; Device Marking:.36; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Pulse Current Idm:6A; Termination Type:Surface Mount Device; Voltage Vds Typ:30V; Voltage Vgs Max:-1.6V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain |
| Factory Pack Quantity | 3000 |
| Fall Time | 9 ns |
| Forward Transconductance - Min | 3 S |
| Height | 1.1 mm |
| Id - Continuous Drain Current | -1.6 A |
| Length | 2 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-323-6 |
| Packaging | Cut Tape |
| Part # Aliases | FDG316P_NL |
| Pd - Power Dissipation | 750 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 160 mOhms |
| Rise Time | 9 ns |
| RoHS | Details |
| Series | FDG316P |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 14 ns |
| Typical Turn-On Delay Time | 8 ns |
| Unit Weight | 0.000988 oz |
| Vds - Drain-Source Breakdown Voltage | -30 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.25 mm |
| Вес, г | 0.0307 |