NVMYS025N06CLTWG
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см. техническую документацию
см. техническую документацию
1 060 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
800 ֏
от 10 шт. —
680 ֏
от 100 шт. —
600 ֏
2 шт.
на сумму 2 120 ֏
Описание
Электроэлемент
Transistor MOSFET N-CH 60V 21A 5-Pin T/R - Tape and Reel (Alt: NVMYS025N06CLTWG)
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 8.5(A) |
| Drain-Source On-Volt | 60(V) |
| Gate-Source Voltage (Max) | '±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 175C |
| Operating Temperature Classification | Military |
| Package Type | LFPAK |
| Packaging | Tape and Reel |
| Pin Count | 4+Tab |
| Polarity | N |
| Power Dissipation | 3.8(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Brand: | onsemi |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 3000 |
| Fall Time: | 2.5 ns |
| Forward Transconductance - Min: | 20 S |
| Id - Continuous Drain Current: | 21 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | LFPAK-4 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 3.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 5.8 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 27.5 mOhms |
| Rise Time: | 12.5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns |
| Typical Turn-On Delay Time: | 5 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 21 A |
| Maximum Drain Source Resistance | 43 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 24 W |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 5.8 @ 10 V nC |
| Width | 4.25mm |
| Вес, г | 0.1213 |