DMP3020LSS-13, MOSFET P-CH 30V 12A 8SOP
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см. техническую документацию
см. техническую документацию
225 ֏
Кратность заказа 10 шт.
от 100 шт. —
181 ֏
от 500 шт. —
137 ֏
от 2500 шт. —
126 ֏
10 шт.
на сумму 2 250 ֏
Описание
Trans MOSFET P-CH 30V 12A 8-Pin SOP T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 12 |
| Maximum Drain Source Resistance (mOhm) | 14 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 800 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | SOP |
| Supplier Package | SOP |
| Typical Fall Time (ns) | 30 |
| Typical Gate Charge @ 10V (nC) | 38.2 |
| Typical Gate Charge @ Vgs (nC) | 38.2 10V |
| Typical Input Capacitance @ Vds (pF) | 1802 15V |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 46 |
| Typical Turn-On Delay Time (ns) | 5.1 |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 30 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 12 A |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Pd - Power Dissipation: | 2.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Qg - Gate Charge: | 30.7 nC |
| Rds On - Drain-Source Resistance: | 14 mOhms |
| Rise Time: | 8 ns |
| Series: | DMP3020 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 46 ns |
| Typical Turn-On Delay Time: | 5.1 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.85 |