BSS138, MOSFETs N-Channel SOT23-3 Vdss=50V Vgss=20V Pd=360mW
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58 ֏
Мин. кол-во для заказа 20 шт.
Кратность заказа 10 шт.
от 50 шт. —
53 ֏
от 200 шт. —
49 ֏
20 шт.
на сумму 1 160 ֏
Описание
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Технические параметры
Brand | ON Semiconductor/Fairchild |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 9 ns |
Forward Transconductance - Min | 0.5 S |
Height | 1.2 mm |
Id - Continuous Drain Current | 220 mA |
Length | 2.9 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | SOT-23-3 |
Packaging | Reel |
Part # Aliases | BSS138_NL |
Pd - Power Dissipation | 360 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 3.5 Ohms |
Rise Time | 9 ns |
RoHS | Details |
Series | BSS138 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 2.5 ns |
Unit Weight | 0.001129 oz |
Vds - Drain-Source Breakdown Voltage | 50 V |
Vgs - Gate-Source Voltage | 20 V |
Width | 1.3 mm |
Channel Type | N |
Maximum Continuous Drain Current | 220 mA |
Maximum Drain Source Resistance | 3.5 Ω |
Maximum Drain Source Voltage | 50 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 1.5V |
Maximum Power Dissipation | 360 mW |
Minimum Gate Threshold Voltage | 0.8V |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-23 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 1.7 nC @ 10 V |
Automotive | No |
ECCN (US) | EAR99 |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 0.22 |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.22 |
Maximum Diode Forward Voltage (V) | 1.4 |
Maximum Drain Source Resistance (mOhm) | 3500@10V |
Maximum Drain Source Voltage (V) | 50 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 1.5 |
Maximum IDSS (uA) | 0.5 |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 350 |
Maximum Operating Temperature (°C) | 150 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Power Dissipation (mW) | 360 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.36 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 0.88 |
Minimum Gate Threshold Voltage (V) | 0.8 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Operating Junction Temperature (°C) | -55 to 150 |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Process Technology | DMOS |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Typical Diode Forward Voltage (V) | 0.8 |
Typical Fall Time (ns) | 7 |
Typical Gate Charge @ 10V (nC) | 1.7 |
Typical Gate Charge @ Vgs (nC) | 1.7@10V |
Typical Gate Plateau Voltage (V) | 2 |
Typical Gate Threshold Voltage (V) | 1.3 |
Typical Gate to Drain Charge (nC) | 0.4 |
Typical Gate to Source Charge (nC) | 0.1 |
Typical Input Capacitance @ Vds (pF) | 27@25V |
Typical Output Capacitance (pF) | 13 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 6@25V |
Typical Rise Time (ns) | 9 |
Typical Turn-Off Delay Time (ns) | 20 |
Typical Turn-On Delay Time (ns) | 2.5 |
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 7 ns |
Forward Transconductance - Min: | 0.12 S |
Id - Continuous Drain Current: | 220 mA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-23-3 |
Part # Aliases: | BSS138_NL |
Pd - Power Dissipation: | 360 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signals |
Qg - Gate Charge: | 1.7 nC |
Rds On - Drain-Source Resistance: | 3.5 Ohms |
Rise Time: | 9 ns |
Series: | BSS138 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 20 ns |
Typical Turn-On Delay Time: | 2.5 ns |
Vds - Drain-Source Breakdown Voltage: | 50 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
Continuous Drain Current | 0.2(A) |
Drain-Source On-Volt | 50(V) |
Gate-Source Voltage (Max) | ±20(V) |
Number of Elements | 1 |
Operating Temp Range | -55C to 150C |
Operating Temperature Classification | Military |
Polarity | N |
Power Dissipation | 0.225(W) |
Rad Hardened | No |
Type | Power MOSFET |