NTR5105PG
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
220 ֏
от 10 шт. —
146 ֏
от 100 шт. —
74 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
MOSFET, P-CH, -60V, -0.196A, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-196mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:347mW; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 1 P-Channel |
| Factory Pack Quantity | 3000 |
| Fall Time | 12.8 ns |
| Forward Transconductance - Min | 227 mS |
| Id - Continuous Drain Current | -196 mA |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 347 mW |
| Product Category | MOSFET |
| Qg - Gate Charge | 1 nC |
| Rds On - Drain-Source Resistance | 1.6 Ohms |
| Rise Time | 4 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 8.8 ns |
| Typical Turn-On Delay Time | 5.8 ns |
| Vds - Drain-Source Breakdown Voltage | -60 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | -3 V |
| Вес, г | 0.027 |
Техническая документация
Datasheet NTR5105PT1G
pdf, 134 КБ