FDD8778
2 120 ֏
от 2 шт. —
1 680 ֏
от 5 шт. —
1 340 ֏
от 10 шт. —
1 230 ֏
1 шт.
на сумму 2 120 ֏
Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 35A I(D), 25V, 0.014OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA
Технические параметры
| Channel Mode | Enhancement |
| Continuous Drain Current | 35(A) |
| Drain-Source On-Volt | 25(V) |
| Gate-Source Voltage (Max) | ±20(V) |
| Mounting | Surface Mount |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 175C |
| Operating Temperature Classification | Military |
| Package Type | DPAK |
| Packaging | Tape and Reel |
| Pin Count | 2+Tab |
| Polarity | N |
| Power Dissipation | 39(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
| Вес, г | 0.3969 |