RQ5E035ATTCL, 30V 3.5A 1W 50m ё@3.5A,10V 2.5V@1mA P Channel SOT-346 MOSFETs ROHS
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см. техническую документацию
см. техническую документацию
4350 шт., срок 8-10 недель
198 ֏
Кратность заказа 5 шт.
от 50 шт. —
159 ֏
от 150 шт. —
146 ֏
от 500 шт. —
123 ֏
5 шт.
на сумму 990 ֏
Альтернативные предложения1
Описание
P-канал 30 В 3,5 А (Ta) 1 Вт (Ta) Монтаж на поверхность TSMT3
Технические параметры
| Base Product Number | RQ5E035 -> |
| Current - Continuous Drain (Id) @ 25В°C | 3.5A (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C (TJ) |
| Other Related Documents | http://rohmfs.rohm.com/en/techdata_basic/transisto |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Package / Case | SC-96 |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Simulation Models | http://rohmfs.rohm.com/en/products/library/spice/d |
| Supplier Device Package | TSMT3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Brand: | ROHM Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 20 ns |
| Id - Continuous Drain Current: | 3.5 A |
| Manufacturer: | ROHM Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-346-3 |
| Part # Aliases: | RQ5E035AT |
| Pd - Power Dissipation: | 1 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 10 nC |
| Rds On - Drain-Source Resistance: | 38 mOhms |
| Rise Time: | 12 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.01 |
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 сентября1 | бесплатно |
| HayPost | 22 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг