FDP047AN08A0, Транзистор: N-MOSFET; 75В; 80А; 310Вт; TO220
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4 050 ֏
от 3 шт. —
3 570 ֏
от 10 шт. —
2 770 ֏
1 шт.
на сумму 4 050 ֏
Технические параметры
| Case | TO220-3 |
| Drain current | 80A |
| Drain-source voltage | 75V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | ONSEMI |
| Mounting | THT |
| On-state resistance | 11mΩ |
| Polarisation | unipolar |
| Power dissipation | 310W |
| Type of transistor | N-MOSFET |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 80 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Part # Aliases: | FDP047AN08A0_NL |
| Pd - Power Dissipation: | 310 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 4 mOhms |
| Rise Time: | 88 ns |
| Series: | FDP047AN08A0 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 2 |
Техническая документация
Datasheet
pdf, 860 КБ