FZT855
1 060 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
800 ֏
от 10 шт. —
680 ֏
от 23 шт. —
620 ֏
2 шт.
на сумму 2 120 ֏
Описание
Электроэлемент
TRANSISTOR,NPN,150V,5A,SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:180V; Transition Frequency ft:90MHz; Power Dissipation Pd:3W; DC Collector Current:5A; DC Current Gain hFE:200hFE; Transistor Ca
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 250 V |
| Collector- Emitter Voltage VCEO Max | 150 V |
| Collector-Emitter Saturation Voltage | 355 mV |
| Configuration | Single |
| Continuous Collector Current | 5 A |
| DC Collector/Base Gain hfe Min | 15 at 5 A, 5 V |
| DC Current Gain hFE Max | 100 |
| Emitter- Base Voltage VEBO | 7 V |
| Factory Pack Quantity | 1000 |
| Gain Bandwidth Product fT | 90 MHz |
| Height | 1.65 mm(Max) |
| Length | 6.7 mm(Max) |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 10 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-223-4 |
| Packaging | Reel |
| Pd - Power Dissipation | 3 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | FZT855 |
| Transistor Polarity | NPN |
| Width | 3.7 mm(Max) |
| Вес, г | 0.15 |
Техническая документация
Datasheet FZT855TA
pdf, 506 КБ