FDS6930B, Транзистор
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см. техническую документацию
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2 600 ֏
1 шт.
на сумму 2 600 ֏
Описание
Полевые МОП-транзисторы Fairchild PowerTrench
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 2 ns |
Forward Transconductance - Min: | 19 S |
Id - Continuous Drain Current: | 5.5 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package / Case: | SOIC-8 |
Part # Aliases: | FDS6930B_NL |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 3.8 nC |
Rds On - Drain-Source Resistance: | 38 mOhms |
Rise Time: | 6 ns |
Series: | FDS6930B |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | PowerTrench |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 16 ns |
Typical Turn-On Delay Time: | 6 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 1 V |
Case | SO8 |
Drain current | 5.5A |
Drain-source voltage | 20V |
Gate charge | 3.8nC |
Gate-source voltage | ±20V |
Kind of channel | enhanced |
Kind of package | reel, tape |
Manufacturer | ONSEMI |
Mounting | SMD |
On-state resistance | 62mΩ |
Polarisation | unipolar |
Power dissipation | 2W |
Technology | PowerTrench® |
Type of transistor | N-MOSFET x2 |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 5.5 A |
Maximum Drain Source Resistance | 38 mΩ |
Maximum Drain Source Voltage | 30 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 2 W |
Minimum Gate Threshold Voltage | 1V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 2 |
Package Type | SOIC |
Pin Count | 8 |
Series | PowerTrench |
Transistor Configuration | Isolated |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 2.7 nC @ 5 V |
Width | 4mm |