NTD5865NLG
2 070 ֏
от 2 шт. —
1 630 ֏
от 5 шт. —
1 310 ֏
от 6 шт. —
1 250 ֏
1 шт.
на сумму 2 070 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 46A, 71W, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:52W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 46A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-252-3, DPak(2 Leads+Tab), SC-63 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 71W(Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 20A, 10V |
| Series | - |
| Supplier Device Package | DPAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Вес, г | 0.46 |
Техническая документация
Документация
pdf, 128 КБ