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2SCR513P5T100, 50V 500mW 180@50mA,2V 1A NPN SOT-89-3 Bipolar Transistors - BJT ROHS

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240 шт., срок 8-10 недель

190 ֏

Кратность заказа 5 шт.

от 50 шт. — 163 ֏

от 150 шт. — 150 ֏

5 шт. на сумму 950 ֏

Альтернативные предложения4

Номенклатурный номер: 8007953438

Бренд: Rohm

Описание

Биполярный (BJT) транзистор NPN 50V 1A 360MHz 500mW Surface Mount MPT3

Технические параметры

Base Product Number	2SCR513 ->
Current - Collector (Ic) (Max)	1A
Current - Collector Cutoff (Max)	1ВµA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 50mA, 2V
ECCN	EAR99
Frequency - Transition	360MHz
HTSUS	8541.21.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	150В°C (TJ)
Other Related Documents	http://rohmfs.rohm.com/en/techdata_basic/transisto
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	TO-243AA
Power - Max	500mW
REACH Status	REACH Affected
RoHS Status	ROHS3 Compliant
Simulation Models	http://rohmfs.rohm.com/en/products/library/spice/d
Supplier Device Package	MPT3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Brand	ROHM Semiconductor
Collector- Base Voltage VCBO	50 V
Collector- Emitter Voltage VCEO Max	50 V
Collector-Emitter Saturation Voltage	130 mV
Configuration	Single
Continuous Collector Current	1 A
DC Collector/Base Gain hfe Min	180 at 50 mA, 2 V
DC Current Gain hFE Max	450 at 50 mA, 2 V
Emitter- Base Voltage VEBO	6 V
Factory Pack Quantity	1000
Gain Bandwidth Product fT	360 MHz
Manufacturer	ROHM Semiconductor
Maximum DC Collector Current	1 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Packaging	Reel
Pd - Power Dissipation	500 mW
Product Category	Bipolar Transistors-BJT
RoHS	Details
Series	2SxR
Technology	Si
Transistor Polarity	NPN
Collector Current (Ic)	1A
Collector Cut-Off Current (Icbo)	1uA
Collector-Emitter Breakdown Voltage (Vceo)	50V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	130mV@500mA, 25mA
DC Current Gain (hFE@Ic,Vce)	180@50mA, 2V
Power Dissipation (Pd)	500mW
Transition Frequency (fT)	360MHz
Maximum Collector Base Voltage	50 V
Maximum Collector Emitter Voltage	50 V
Maximum Emitter Base Voltage	6 V
Maximum Operating Frequency	100 MHz
Maximum Power Dissipation	500 mW
Minimum DC Current Gain	180
Number of Elements per Chip	1
Package Type	SOT-89
Pin Count	3+Tab
Transistor Configuration	Common Emitter
Вес, г	1