FDMS3604S
![FDMS3604S](https://static.chipdip.ru/lib/083/DOC043083942.jpg)
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см. техническую документацию
см. техническую документацию
1 940 ֏
от 10 шт. —
1 460 ֏
от 100 шт. —
1 060 ֏
от 500 шт. —
840 ֏
1 шт.
на сумму 1 940 ֏
Технические параметры
Brand: | onsemi/Fairchild |
Channel Mode: | Enhancement |
Configuration: | Dual |
Factory Pack Quantity: | 3000 |
Fall Time: | 2.2 ns, 3.4 ns |
Forward Transconductance - Min: | 61 S, 130 S |
Id - Continuous Drain Current: | 13 A, 23 A |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 2 Channel |
Package/Case: | Power-56-8 |
Pd - Power Dissipation: | 2.2 W, 2.5 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 21 nC, 47 nC |
Rds On - Drain-Source Resistance: | 2.2 mOhms, 5.8 mOhms |
Rise Time: | 2.5 ns, 4.8 ns |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 20 ns, 31 ns |
Typical Turn-On Delay Time: | 8.2 ns, 13 ns |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.7 V, 3 V |
Техническая документация
Datasheet
pdf, 836 КБ