FDS5670
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см. техническую документацию
см. техническую документацию
2 640 ֏
от 10 шт. —
2 030 ֏
от 100 шт. —
1 490 ֏
от 500 шт. —
1 180 ֏
1 шт.
на сумму 2 640 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 60В, 10А, 2,5Вт, SO8 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 2500 |
| Fall Time | 23 ns |
| Forward Transconductance - Min | 39 S |
| Height | 1.75 mm |
| Id - Continuous Drain Current | 10 A |
| Length | 4.9 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-8 |
| Packaging | Reel |
| Part # Aliases | FDS5670_NL |
| Pd - Power Dissipation | 2.5 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 14 mOhms |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | FDS5670 |
| Technology | Si |
| Tradename | PowerTrench |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 50 ns |
| Typical Turn-On Delay Time | 16 ns |
| Unit Weight | 0.004586 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 3.9 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 10 A |
| Maximum Drain Source Resistance | 14 mΩ |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Power Dissipation | 2.5 W |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 49 nC @ 10 V |