FDD2582
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1 590 ֏
от 10 шт. —
1 190 ֏
от 100 шт. —
870 ֏
1 шт.
на сумму 1 590 ֏
Описание
Описание Транзистор: N-MOSFET, полевой, 150В, 21А, 95Вт, TO252AA Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 19 ns |
| Id - Continuous Drain Current: | 21 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Part # Aliases: | FDD2582_NL |
| Pd - Power Dissipation: | 95 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 25 nC |
| Rds On - Drain-Source Resistance: | 66 mOhms |
| Rise Time: | 19 ns |
| Series: | FDD2582 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | PowerTrench |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 32 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 150 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 3.7 A |
| Maximum Drain Source Voltage | 150 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 175 °C |
| RDS-on | 66@10V mOhm |
| Typical Fall Time | 19 ns |
| Typical Rise Time | 19 ns |
| Typical Turn-Off Delay Time | 32 ns |
| Typical Turn-On Delay Time | 8 ns |
Техническая документация
Datasheet
pdf, 401 КБ
Документация
pdf, 479 КБ