2N4922G, TRANS NPN 60V 1A TO126
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
484 ֏
Мин. кол-во для заказа 2 шт.
от 10 шт. —
388 ֏
от 100 шт. —
313 ֏
от 500 шт. —
279 ֏
2 шт.
на сумму 968 ֏
Описание
The Power 3 A, 80 V Bipolar NPN Transistor is designed for driver circuits, switching and amplifier applications.
Технические параметры
| Maximum Collector Base Voltage | 60 V dc |
| Maximum Collector Emitter Voltage | 60 V dc |
| Maximum DC Collector Current | 3 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Frequency | 1 MHz |
| Maximum Operating Temperature | +150 C |
| Maximum Power Dissipation | 30 W |
| Minimum DC Current Gain | 30 |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-225 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Type | NPN |
| Category | Bipolar Power |
| Collector Current (DC) | 1(A) |
| Collector Current (DC) (Max) | 1 A |
| Collector-Base Voltage | 60(V) |
| Collector-Emitter Voltage | 60(V) |
| Configuration | Single |
| DC Current Gain | 40 |
| DC Current Gain (Min) | 40 |
| Emitter-Base Voltage | 5(V) |
| Frequency | 3(MHz) |
| Frequency (Max) | 3 MHz |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -65C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Packaging | Box |
| Power Dissipation | 30(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
| Collector Current (Ic) | 1A |
| Collector Cut-Off Current (Icbo) | 500uA |
| Collector-Emitter Breakdown Voltage (Vceo) | 60V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@1A, 100mA |
| DC Current Gain (hFE@Ic,Vce) | 30@500mA, 1V |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 30W |
| Transition Frequency (fT) | 3MHz |
Техническая документация
Datasheet 2N4923G
pdf, 192 КБ
Документация
pdf, 246 КБ