NTMFS5C670NLG
1 150 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
840 ֏
от 10 шт. —
740 ֏
от 100 шт. —
640 ֏
2 шт.
на сумму 2 300 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 71A, DFN-5; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 1500 |
| Fall Time | 4 ns |
| Forward Transconductance - Min | 82 S |
| Id - Continuous Drain Current | 71 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-FL-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 61 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 20 nC |
| Rds On - Drain-Source Resistance | 8.8 mOhms |
| Rise Time | 60 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-channel |
| Typical Turn-Off Delay Time | 15 ns |
| Typical Turn-On Delay Time | 11 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Вес, г | 0.16 |
Техническая документация
Datasheet NTMFS5C670NLT1G
pdf, 79 КБ