FDMS86163P, MOSFET P-CH 100V 7.9A/50A 8PQFN
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Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 7.9A(Ta), 50A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4085pF @ 50V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-PowerTDFN |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 2.5W(Ta), 104W(Tc) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 7.9A, 10V |
| Series | PowerTrenchВ® |
| Supplier Device Package | 8-PQFN(5x6) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±25V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 7.9 A |
| Maximum Drain Source Resistance | 36 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 104 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | PQFN8 |
| Pin Count | 8 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Width | 5.85mm |
| Case | PQFN8 |
| Drain current | -50A |
| Drain-source voltage | -100V |
| Gate charge | 59nC |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 36mΩ |
| Polarisation | unipolar |
| Power dissipation | 104W |
| Type of transistor | P-MOSFET |
| Вес, г | 0.07 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 551 КБ
Datasheet FDMS86163P
pdf, 431 КБ
Документация
pdf, 540 КБ