FDN358P, MOSFET P-CH 30V 1.5A SUPERSOT3

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251 ֏

Кратность заказа 10 шт.

от 100 шт. — 203 ֏

от 500 шт. — 159 ֏

10 шт. на сумму 2 510 ֏

Альтернативные предложения1

Номенклатурный номер: 8009604854

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.

Brand	ON Semiconductor/Fairchild
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	13 ns
Forward Transconductance - Min	3.5 S
Height	1.12 mm
Id - Continuous Drain Current	-1.5 A
Length	2.9 mm
Manufacturer	ON Semiconductor
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SSOT-3
Packaging	Reel
Part # Aliases	FDN358P_NL
Pd - Power Dissipation	500 mW(1/2 W)
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	125 mOhms
Rise Time	13 ns
RoHS	Details
Series	FDN358P
Technology	Si
Tradename	PowerTrench
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Type	MOSFET
Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	5 ns
Unit Weight	0.001058 oz
Vds - Drain-Source Breakdown Voltage	-30 V
Vgs - Gate-Source Voltage	20 V
Width	1.4 mm
Channel Type	P
Maximum Continuous Drain Current	1.5 A
Maximum Drain Source Resistance	125 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	500 mW
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	4 nC @ 10 V
Вес, г	0.03