NTMFS5H600NLG
12 300 ֏
от 2 шт. —
11 500 ֏
от 5 шт. —
10 900 ֏
от 10 шт. —
10 500 ֏
1 шт.
на сумму 12 300 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 250A, DFN; Transistor Polarity:N Channel; Continuous Drain Current Id:250A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:160W; Transistor Case Style:DFN; No. of Pins:5Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:Lead (27-Jun-2018)
Технические параметры
| Brand | ON Semiconductor |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 1500 |
| Fall Time | 160 ns |
| Forward Transconductance - Min | 280 S |
| Id - Continuous Drain Current | 250 A |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SO-FL-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 160 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 89 nC |
| Rds On - Drain-Source Resistance | 1.1 mOhms |
| Rise Time | 130 ns |
| RoHS | Details |
| Series | NTMFS5H |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 88 ns |
| Typical Turn-On Delay Time | 28 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.2 V |
| Вес, г | 0.1911 |
Техническая документация
Документация
pdf, 209 КБ